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OKUMURA, Hironori

Assistant Professor
Institute of Pure and Applied Sciences
University of Tsukuba

Research fields: Semiconductor

Research project: Crystal growth and device fabrication of ultra-wide bandgap semiconductors

Keywords: AlN, Sapphire, power device, radiation detector, optogenetics

Researchers Information: https://trios.tsukuba.ac.jp/researcher/0000003716

researchmap: https://researchmap.jp/h_okumura

Biography

2012/ 3　 Ph.D, Electronics Science and Engineering, Kyoto University, Kyoto, Japan
2012/4～2014/3 JSPS Overseas Research Fellow, (UCSB, CA, US.)
2014/4～2015/3 Research associate, Basic Research Labolatory, NTT
2015/4～2018/3　Assistant Professor (International tenure track), the Univ. of Tsukuba
（2015/4～2016/3　Visiting researcher, EPFL, Switzerland）
（2016/4～2018/3 Visiting researcher, MIT, US）
2018/4～present　 Assistant Professor (tenure), the Univ. of Tsukuba

Research Outline

We have worked on the device fabrication and crystal growth for power devices and ultraviolet LED. Particularly, our group has focused on Gallium-oxide (β-Ga2O3) and Aluminum-nitride (AlN) devices. These materials would significantly contribute to the saving energy. In 2018, we achieved the first demonstration of AlN-channel transistors. Recently, we firstly reported the room-temperature electrically conductive sapphire (α-Al2O3). Sapphire-based materials would contribute to the high-power, high-temperature, and high-radiation-tolerance devices at low cost.

What is my goal as a transborder researcher?

Our research goal is to connect everything in the earth, in space, and in the biological body through semiconductor devices. By making the most of semiconductor properties, we would like to discover new possibilities over the wall of my research field.

Movies

OKUMURA, Hironori, TRiSTAR Fellow (1st-term)

In Preparation.